'Institute of Electrical and Electronics Engineers (IEEE)'
Doi
Abstract
The operation principle of a low power E-mode p-channel GaN MOSHFET is explained via TCAD simulations. The challenges of achieving negative threshold voltage with the scaling of gate length are addressed by adjusting the mole fraction of an AlGaN cap layer beneath the gate. An inverter consisting of the proposed p-channel GaN MOSHFET with a gate length of 025 μm shows promise of a CMOS compatible Power Management IC in the MHz range
