As the title for this project, this fmal report for FYP 2 will include and
conclude all the work and research that I have done regarding the Electrical
properties of High Voltage Rectifier diodes simulated using Athena and Atlas. The
objective of this project is to simulate the fabrication process of the High Voltage
Rectifier based on the curve trace data gain during my internship in a semiconductor
company. This report will summarize the work done on of the project. First chapter
will give a brief description about the background of the project. There is also
problem statement and some objectives included in this chapter. Second chapter will
concentrate more on the study on the theory of High Voltage Rectifier diodes. Three
important part of the High Voltage p-n junction will be discussed which is; the
structure of a high voltage p-n junction, comparison between available structure and
the electrical characteristics of each structure. The latest progress is on the research
for the most suitable material for the high voltage diodes. In third chapter, there is a
chart describing a methodology on how this project to be carried on. The chart has
been followed to avoid any disturbance so that this project can be completed as
planned
