We are developing a Compton telescope based on high resolution Si and CdTe
imaging devices in order to obtain a high sensitivity astrophysical observation
in sub-MeV gamma-ray region. In this paper, recent results from the prototype
Si/CdTe semiconductor Compton telescope are reported. The Compton telescope
consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors,
combined with low noise analog LSI, VA32TA. With this detector, we obtained
Compton reconstructed images and spectra from line gamma-rays ranging from 81
keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and
356 keV, respectively, and the angular resolution is 9.9 degrees and 5.7
degrees at 122 keV and 356 keV, respectively.Comment: 12 pages, 14 figures, submitted to SPIE conference proceedings vol.
5501, "High-Energy Detectors in Astronomy", Glasgow UK, 6/21-6/24 200