ABSTRAK
Metal oxide semiconductor (MOS) circuits are currently the cornerstones of the modern microelectronics industry. The primary physical effect of neutron bombarding semiconductor material is the formation of displacement defects within the crystal lattice structure. Neutron radiation causes failure of MOS devices due to two mechanisms, that is, trapped charge density buildup in the silicon dioxide layer, and an increasing in the density of trapping states at the silicon dioxide interface. The neutron radiation induced interface traps cause a degradation in mobility of the carriers in the channel of the MOS transistor, this leads to a reduction in channel conductance and transconductance for the transistor, and thus a decrease in gain.
Kata kunci: Radiasi neutro
