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Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal
Authors
Peter H. Beton
Mahabub A. Bhuiyan
+10 more
Y. Cao
Laurence Eaves
Jake D.G. Greener
Zakhar D. Kovalyuk
Zakhar R. Kudrynskyi
Oleg Makarovsky
A. Mishchenko
K.S. Novoselov
Amalia Patanè
Evgeny E. Vdovin
Publication date
10 October 2017
Publisher
'American Physical Society (APS)'
Doi
Abstract
© 2017 authors. Published by the American Physical Society. We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe
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