Analysis of density and time constant of interface states of MIS device by conductance method

Abstract

374-378<span style="font-size:11.0pt;mso-bidi-font-size: 10.0pt;font-family:" times="" new="" roman","serif";mso-fareast-font-family:"times="" roman";="" mso-ansi-language:en-us;mso-fareast-language:en-us;mso-bidi-language:ar-sa"="" lang="EN-US">The density and time constant of interface states of Au/Si3N4/n-Si (MIS) device have been analyzed by conductance method. The capacitance and conductance measurements of the device have been performed at various frequencies in the range of 1 kHz-1 MHz. Experimental results show that Gp/ω-log(f) plots for each voltage value give <span style="font-size: 11.0pt;mso-bidi-font-size:10.0pt;font-family:" times="" new="" roman","serif";="" mso-fareast-font-family:mtsy;mso-ansi-language:en-us;mso-fareast-language:en-us;="" mso-bidi-language:ar-sa"="" lang="EN-US">a peak because of the presence of interface states. The density (Nss) and time constant () of interface states have been calculated from maximum value of the peak. The values of Nss and range from 2.49×1013 eV-1cm-2 to 7.57×1012 eV-1cm-2 and from 2.67×10-5s to 1.67×10-5s, respectively.</span