980-988In this paper, a comprehensive comparative study
of various power MOSFET device structures designed and developed during the
past decade has been presented. Various design issues related with power MOSFET
have been studied to look into their on-resistance (RON)
versus breakdown voltage (Bv)
trade off. Some of the existing
power MOSFET device topologies have been compared with respect to their RON and Bv. The study reveals that the law-doped n epi region
which gives square law relationship between <span style="mso-bidi-font-family:
Arial;mso-bidi-language:HI">RON <span style="mso-bidi-font-family:
Arial;mso-bidi-language:HI">and Bv in the conventional power MOSFET is being
constantly engineered for optimizing <span style="mso-bidi-font-family:
Arial;mso-bidi-language:HI">RON-Bv trade-off subsequently led to many structural
modifications in its basic design giving rise to many new power MOSFET device
structures such as SSCFET (Silicon Semiconductor Corp. FET), JBSFET (Junction
barrier controlled Schottky FET), superjunction <span style="mso-bidi-font-family:
Arial;mso-bidi-language:HI">(SJ)/COOLMOS™ <span style="mso-bidi-language:
HI">transistor, semi-superjunction devices and FLlMOSFET (power MOSFETs with
vertical floating islands) so as to overcome the conventional silicon limit.
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