Comparative study of power MOSFET device structures

Abstract

980-988In this paper, a comprehensive comparative study of various power MOSFET device structures designed and developed during the past decade has been presented. Various design issues related with power MOSFET have been studied to look into their on-resistance (RON) versus breakdown voltage (Bv) trade off. Some of the existing power MOSFET device topologies have been compared with respect to their RON and Bv. The study reveals that the law-doped n epi region which gives square law relationship between <span style="mso-bidi-font-family: Arial;mso-bidi-language:HI">RON <span style="mso-bidi-font-family: Arial;mso-bidi-language:HI">and Bv in the conventional power MOSFET is being constantly engineered for optimizing <span style="mso-bidi-font-family: Arial;mso-bidi-language:HI">RON-Bv trade-off subsequently led to many structural modifications in its basic design giving rise to many new power MOSFET device structures such as SSCFET (Silicon Semiconductor Corp. FET), JBSFET (Junction barrier controlled Schottky FET), superjunction <span style="mso-bidi-font-family: Arial;mso-bidi-language:HI">(SJ)/COOLMOS™ <span style="mso-bidi-language: HI">transistor, semi-superjunction devices and FLlMOSFET (power MOSFETs with vertical floating islands) so as to overcome the conventional silicon limit. </span