Silicon drift detectors with integrated JFET: Simulation and design

Abstract

705-713High resolution, low energy X-ray spectroscopy systems have been developed recently using the Silicon drift detector (SDD) with in-built Junction field effect transistor (JFET). A comprehensive simulation study of the SDD and integrated JFET with a view to formulate the design flow has been carried out. An optimized process flow for fabrication of SDD and integrated JFET on high resistivity detector substrate is presented. Based on these studies, several mask layouts for the SDD, JFET and reset MOSFET have been designed. </span