<span style="font-size: 22.5pt;mso-bidi-font-size:15.5pt;font-family:"Times New Roman","serif"; mso-bidi-font-weight:bold">Anomalous resistive transition and frequency dependent dielectric constant of <span style="font-size:21.5pt; mso-bidi-font-size:14.5pt;font-family:"Arial","sans-serif";mso-bidi-font-weight: bold;mso-bidi-font-style:italic">Zn_1-_{<span style="font-size:23.0pt;mso-bidi-font-size:16.0pt;font-family:"Times New Roman","serif"; mso-bidi-font-weight:bold;mso-bidi-font-style:italic">x</span>}<span style="font-size:23.0pt;mso-bidi-font-size:16.0pt;font-family:"Times New Roman","serif"; mso-bidi-font-weight:bold;mso-bidi-font-style:italic">M_xO <span style="font-size:22.5pt;mso-bidi-font-size:15.5pt;font-family:"Times New Roman","serif"; mso-bidi-font-weight:bold">[M=Li (Mg, Ba)] system </span></span></span></span>

Abstract

211-216<span style="font-size: 15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">The II-VI materials of Zn1-xMxO have been synthesized by solid-state reaction method and their structural, electrical and dielectric properties studied. The lattice parameters of these materials are found to be consistent with the reported values. The dielectric constant measured at different five frequencies agrees well with the published values and found to be maximum for doping concentration <span style="font-size:15.5pt; mso-bidi-font-size:8.5pt;font-family:" times="" new="" roman","serif""="">x= 0.2, at all frequencies. A de resistive anomaly was found for all samples at a certain temperature called transition temperature (Td-s) from dielectric to semiconducting state, which depends on the concentration and nature of the dopant atoms in ZnO. </span