Preparation and properties of thin silicon nitride films

Abstract

373-377<span style="font-size:14.0pt;line-height: 115%;font-family:" times="" new="" roman";mso-fareast-font-family:"times="" roman";="" color:black;mso-ansi-language:en-in;mso-fareast-language:en-in;mso-bidi-language:="" hi"="" lang="EN-IN">Very thin thermal silicon nitride films have been prepared using an indigenously developed nitridation reactor. Growth kinetics of the films have been studied for different pressure conditions in the temperature range 850-1100°C for different time periods. Optical and electrical properties have been studied The values of refractive index, resistivity and dielectric constant of the films have been measured and are found to be 1.95 , 8×1014 ohm-cm and 5.6, respectively.</span