407-416Semimetal-semiconductor
transition in Bi-doped with 4 at. % In single crystal is reported for the first
time. Resistivity and Hall coefficient measurements performed on single
crystalline sample of Bi-In (4at.%) system for an extensive range of
temperature from 4.2-300 K, reveal semiconducting behaviour explicitly in the
range 30-130 K. Electronic parameters, i.e. carrier concentration and Hall
mobility are calculated for the entire temperature range of 4.2-300 K. The pair
of light mass bands at Lc and Lv moves
up relative to the Tv band resulting in the
disappearance of the overlap between the Lc band and
the Tv band
and an energy gap of the order of 37.3 MeV is introduced between the light
electron (Lc) and heavy hole (Tv)
band. Further, the direct band gap between Lc and Lv
bands is narrowed to a value of 10.9 MeV in comparison to pure bismuth.
An impurity level is also reported on account of doping corresponding to
activation energy of 4.1 MeV. Results from microhardness measurements
and XRD studies of pure Bi and Bi-In (4 at. %) alloy reveal that In makes
complete solid solution with Bi and gains effective entry into the
lattice, altering the periodicity of Bloch Potential and modifying the band
structure of Bi. This seems to be the reason that the transition from semimetal
to semiconductor takes place in the Bi In alloy.</span