Development of low cost set up for anodic bonding and its characterization

Abstract

738-743A low cost experimental set- up for anodic bonding has been developed indigenously in the college laboratory and glass silicon bonding parameters characterized. Anodic bonding between silicon and glass substrates has been characterized in detail. The effects of magnitude of the applied voltage on the time required for complete bonding have also been investigated. The effect of voltage, point contact, bond strength and electrostatic force in anodic wafer bonding process has also been analyzed. The glass to silicon bonding at 1150V, 450ºC has been successfully performed. This enables simple, but highly accurate, alignment of pre-patterned glass and silicon wafers. Fabricated devices have wide benefits like glass transparency at optical wavelength