Strain-dependent Optical Emission In In1 - Xgaxas/inp Quantum Wells

Abstract

InGaAs/InP strained-layer modulation -doped quantum wells were studied by photoluminescence. The combination of the built-in strain and the quantum confinement in this system leads to a strong valence band mixing yielding direct and indirect band gap structures. We demonstrate that the optical emission line shape is strongly dependent on the valence band dispersion and it is a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides an additional evidence of direct-to-indirect band gap transition in strained heterostructures.641515330111533014Gershoni, D., Vandenberg, J.M., Hamm, R.A., Temkin, H., Panish, M.B., (1987) Phys. Rev. B, 36, p. 1320Gershoni, D., Temkin, H., Vandenberg, J.M., Chu, S.N.G., Hamm, R.A., Panish, M.B., (1988) Phys. Rev. Lett., 60, p. 448Gershoni, D., Temkin, H., Panish, M.B., Hamm, R.A., (1989) Phys. Rev. B, 39, p. 5531Chao, C.Y.-P., Chuang, S.L., (1992) Phys. Rev. B, 46, p. 4110Sugawara, M., Okazaki, N., Fujii, T., Yamazaki, S., (1993) Phys. Rev. B, 48, p. 8102Michler, P., Hangleiter, A., Moritz, A., Fuchs, G., Härle, V., Scholz, F., (1993) Phys. Rev. B, 48, p. 111991Triques, A.L.C., Brum, J.A., (1995) Proceedings of the 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 1994, 2, pp. 1328-1331. , edited by D.J. Lockwood (World Scientific)Weihofen, R., Weiser, G., Starck, Ch., Simes, R.J., (1995) Phys. Rev. B, 51, p. 4296Dalfors, J., Lundström, R., Holtz, P.O., Radamson, H.H., Monemar, B., Wallin, J., Landgren, G., (1997) Appl. Phys. Lett., 71, p. 503Hosea, T.J.C., Rowland, G., (1998) Supercond. Sci. Technol., 13, p. 207Tudury, H.A.P., Ribeiro, E., Iikawa, F., Brum, J.A., Bernussi, A.A., Carvalho W., Jr., Gobbi, A., unpublishedBastard, G., Brum, J.A., (1986) IEEE J. Quantum Electron., 22, p. 1625Bastard, G., (1992) Wave Mechanics Applied to Semiconductor Heterostructures, , Les Editions de Physique, ParisBaptizmanskii, V.V., Novak, I.I., Titovets, Yu.F., (1979) Sov. Phys. Solid State, 21, p. 1915Liarokapis, E., Richter, W., (1992) Meas. Sci. Technol., 3, p. 347Thewalt, M.L.W., Harrison, D.A., Reinhart, C.F., Wolk, J.A., Lafontaine, H., (1997) Phys. Rev. Lett., 79, p. 26

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