Raman Phonon Modes Of Zinc Blende Inxga1 - Xn Alloy Epitaxial Layers

Abstract

Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1 - xN (0≤x ≤0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A1 (TO) and E1 (TO) phonon frequencies of the hexagonal InxGa1 - xN alloy. © 1999 American Institute of Physics.75810951097Pankove, J.I., Moustakas, T., Gallium nitrides I (1998) Semiconductors and Semimetals, 50. , Academic, San Diego, CAShan, W., Walukiewicz, W., Haller, E.E., Little, B.D., Song, J.J., McCluskey, M.D., Johnson, N.M., Stall, R.A., (1998) J. Appl. Phys., 84, p. 4452Chichibu, S., Azuhata, T., Sota, T., Nakamura, S., (1997) Appl. Phys. Lett., 70, p. 2822Shan, W., Perlin, P., Ager J.W. III, Walukiewicz, W., Haller, E.E., McCluskey, M.D., Johnson, N.M., Bour, D.P., (1998) Appl. Phys. Lett., 73, p. 1613Chichibu, S., Azuhata, T., Sota, T., Nakamura, S., (1996) Appl. Phys. Lett., 69, p. 4188Narukawa, Y., Kawakami, Y., Funato, M., Fujita, S., Nakamura, S., (1997) Appl. Phys. Lett., 70, p. 981Orton, J.W., Foxon, C.T., (1998) Rep. Prog. Phys., 61, p. 1Abernathy, C.R., MacKenzie, J.D., Bharatan, S.R., Jones, K.S., Pearton, S.J., (1995) Appl. Phys. Lett., 66, p. 1632(1995) J. Vac. Sci. Technol. A, 13, p. 716Müllhäuser, J.R., Jenichen, B., Wassermeier, M., Brandt, O., Ploog, K.H., (1997) Appl. Phys. Lett., 71, p. 909Müllhäuser, J.R., Brandt, O., Trompert, A., Jenichen, B., Ploog, K.H., (1998) Appl. Phys. Lett., 73, p. 1230Holst, J., Hoffmann, A., Broser, I., Frey, T., Schöttker, B., As, D.J., Schikora, D., Lischka, K., (1999) MRS Internet J. Nitride Semicond. Res., 4 S1, pp. G23Feng, Z.C., Schurman, M., Tran, C.A., Salagaj, T., Karlicek, B., Ferguson, I., Stall, R.A., Pitt, G.D., (1998) Mater. Sci. Forum, 264-268, p. 1359Behr, D., Niebuhr, R., Obloh, H., Wagner, J., Bachem, K.H., Kaufmann, U., (1997) Mater. Res. Soc. Symp. Proc., 468, p. 213Osamura, K., Naka, S., Murakami, Y., (1975) J. Appl. Phys., 46, p. 3432Tabata, A., Lima, A.P., Teles, L.K., Scolfaro, L.M.R., Leite, J.R., Lemos, V., Schöttker, B., Lischka, K., (1999) Appl. Phys. Lett., 74, p. 362Tabata, A., Enderlein, R., Leite, J.R., Da Silva, S.W., Galzerani, J.C., Schikora, D., Kloidt, M., Lischka, K., (1996) J. Appl. Phys., 79, p. 4137Strite, S., Chandrasekhar, D., Smith, D.J., Sariel, J., Chen, H., Teraguchi, N., Morkoç, H., (1993) J. Cryst. Growth, 127, p. 204Ho, I., Stringfellow, G.B., (1996) Appl. Phys. Lett., 69, p. 2701Inushima, T., Yaguchi, T., Nagase, A., Iso, A., Shiraishi, T., (1996) Proceedings of the 6th Conference on Silicon Carbide and Related Materials, , Bristol(1996) Inst. Phys. Conf. Ser., 142, p. 971Dyck, J.S., Kash, K., Kim, K., Lambrecht, W.R.L., Hayman, C.C., Argoitia, A., Grossner, M.T., Angus, J.C., (1998) Mater. Res. Soc. Symp. Proc., 482, p. 549Yu, S., Kim, K.W., Bergman, L., Dutta, M., Stroscio, M.A., Zavada, J.M., (1998) Phys. Rev. B, 58, p. 15283Kwon, H.-J., Lee, Y.-H., Miki, O., Yamano, H., Yoshida, A., (1996) Appl. Phys. Lett., 69, p. 937Lee, M.-C., Lin, H.-C., Pan, Y.-C., Shu, C.-K., Ou, J., Chen, W.-H., Chen, W.-K., (1998) Appl. Phys. Lett., 73, p. 260