Laser Reflectometry Applied To The In-situ Etching Control In An Electron Cyclotron Resonance Plasma System

Abstract

ECR BCl3 etching of InGaP/GaAs/InGaAs quantum well laser structures was performed to produce vertical walls with good morphology. Laser reflectometry shows a reduced etching rate for p+-InGaP material. Etching thickness control within 200 angstrom is achieved for InGaP layers.261661