Growth Mechanisms In Laser Crystallization And Laser Interference Crystallization

Abstract

The processes involved in the pulsed laser crystallization of amorphous silicon thin films were studied using transient reflection measurements. A model of the melting and solidification induced by the laser exposure, based on a one-dimensional calculation of the heat flow, was used to simulate the time-dependent reflectivity, yielding agreement with the experiments. Two laser beams interfering on the sample surface lead to the growth of long grains (up to 1.5 μm), with a well-defined orientation. We conclude that this lateral growth results from explosive crystallization combined with liquid phase growth. © 1998 Elsevier Science B.V. All rights reserved.227-230PART 2921924Sameshima, T., Usui, S., (1986) Mater. Res. Soc. Symp. Proc., 71, p. 435Sposili, R.S., Im, J.S., (1996) Appl. Phys. Lett., 69, p. 2864Kim, H.J., Im, J.S., (1995) Appl. Phys. Lett., 68, p. 1513Wood, R.F., Geist, G.A., (1986) Phys. Rev. B., 34, p. 2606Heintze, M., Santos, P.V., Nebel, C.E., Stutzmann, M., (1994) Appl. Phys. Lett., 64, p. 3148Thomson, M.O., Galvin, G.J., Mayer, J.W., Peercy, P.S., Poate, J.M., Jacobson, D.C., Cullis, A.G., Chew, N.G., (1984) Phys. Rev. Lett., 52, p. 2360Toet, D., Aichmayr, G., Mulato, M., Santos, P.V., Spangenberg, A., Bergmann, R.B., (1997) Mater. Res. Soc. Symp. Proc., 467, p. 337Kim, H.J., Im, J.S., (1996) Mater. Res. Soc. Symp. Proc., 397, p. 40