X-ray Diffraction Mapping Of Strain Fields And Chemical Composition Of Sige:si(001) Quantum Dot Molecules

Abstract

A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a Si0.7 Ge0.3 film grown by molecular beam epitaxy at 550°C and a 1 s deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition. © 2006 The American Physical Society.7312Chen, K.M., (1995) Appl. Phys. Lett., 66, p. 34. , APPLAB 0003-6951 10.1063/1.114172Goldfarb, I., (1997) Phys. Rev. Lett., 78, p. 3959. , PRLTAO 0031-9007 10.1103/PhysRevLett.78.3959Mo, Y.-W., (1990) Phys. Rev. Lett., 65, p. 1020. , PRLTAO 0031-9007 10.1103/PhysRevLett.65.1020Tomitori, M., (1994) Appl. Surf. Sci., 76-77, p. 322. , ASUSEE 0169-4332Floro, J.A., (1998) Phys. Rev. Lett., 80, p. 4717. , PRLTAO 0031-9007 10.1103/PhysRevLett.80.4717Ross, F.M., (1998) Phys. Rev. Lett., 80, p. 984. , PRLTAO 0031-9007 10.1103/PhysRevLett.80.984Medeiros-Ribeiro, G., (1998) Science, 279, p. 353. , SCIEAS 0036-8075 10.1126/science.279.5349.353Chaparro, S.A., (1999) Phys. Rev. Lett., 83, p. 1199. , PRLTAO 0031-9007 10.1103/PhysRevLett.83.1199Denker, U., (2005) Appl. Phys. Lett., 772, p. 599. , APPLAB 0003-6951Gray, J.L., (2002) Appl. Phys. Lett., 81, p. 2445. , APPLAB 0003-6951 10.1063/1.1509094Vandervelde, J.T.E., (2003) Appl. Phys. Lett., 83, p. 2505. , APPLAB 0003-6951Jesson, D.E., (1996) Phys. Rev. Lett., 77, p. 1330. , PRLTAO 0031-9007 10.1103/PhysRevLett.77.1330Gray, J.L., (2004) Phys. Rev. Lett., 92, p. 135504. , PRLTAO 0031-9007 10.1103/PhysRevLett.92.135504Schülli, T.U., (2003) Phys. Rev. Lett., 90, p. 066105. , PRLTAO. 0031-9007. 10.1103/PhysRevLett.90.066105Malachias, A., (2003) Phys. Rev. Lett., 91, p. 176101. , PRLTAO 0031-9007 10.1103/PhysRevLett.91.176101Magalhães-Paniago, R., (2002) Phys. Rev. B, 66, p. 245312. , PRBMDO. 0163-1829. 10.1103/PhysRevB.66.245312Krause, B., (2005) Phys. Rev. B, 72, p. 085339. , PRBMDO 0163-1829 10.1103/PhysRevB.72.085339Zhang, Y., (2001) J. Appl. Phys., 90, p. 4748. , JAPIAU 0021-8979 10.1063/1.1407311Gray, J.L., (2005) Phys. Rev. B, 72, p. 155323. , PRBMDO 0163-1829 10.1103/PhysRevB.72.155323Tersoff, J., (1998) Phys. Rev. Lett., 81, p. 3183. , PRLTAO 0031-9007 10.1103/PhysRevLett.81.318