Proposed methods of modeling of electrical and temperature characteristics of single-electrontransistor for providing information to system of computer-aided design Electronics Workbench.Analyzed dependence in current-voltage characteristics of nano-device trough values of temperature andoperating modeРазработаны методы моделирования электрических и температурных характеристик одноэлектронного транзистора для информационного обеспечения системы автоматизированного схемотехническогопроектирования Electronics Workbench. Проанализирована зависимость вольт-амперных характеристик наноприбора от влияния температуры и рабочего режимаРозроблено методи моделювання електричних та температурних характеристик одноелектронного транзистора для інформаційного забезпечення системи автоматизованого схемотехнічного проектування Electronics Workbench. Проаналізовано залежність вольт-амперних характеристик наноприладу від впливу температури таробочого режим

Kosov, A. O.

Melnyk, O. S.

Poliakov, Y. V.

Electronics and Control Systems

English

Наукові журнали Національного Авіаційного Університету

74                                                                     ISSN 1990-5548   Electronics and Control Sуstems  2017. N1(51): 74-77  ___________________________________________________________________________________________________________ ©National Aviation Universitу, 2017 http://ecs.in.ua UDC 621.382.3 (045) 1O. S. Melnyk 2Y. V. Poliakov 3A. O. Kosov COMPUTER SIMULATION OF CHARACTERISTICS SINGLE-ELECTRON TRANSISTORS Educational & Research Institute of Air Navigation, Nation Aviation University, Kyiv, Ukraine E-mails: 1melnyk.ols@gmail.com, 2ibex@ukr.net, 3aaaasssssdddddd@i.ua Abstract—Proposed methods of modeling of electrical and temperature characteristics of single-electron transistor for providing information to system of computer-aided design Electronics Workbench. Analyzed dependence in current-voltage characteristics of nano-device trough values of temperature and operating mode. Index Terms—Single-electron transistor, modeling, volt-ampere characteristics. I.  INTRODUCTION Single-electron nano-devices are modern and perspective elemental base for large scale integral circuits, because they provide ultralow power consumption and up high operating frequency range (up to 10 THz) for new functional nanoelectronic devices. Such devices have one or few sub low regions of conduction, which have extremely low capacity. Due to high resulting charging energy of this area, electrical charge within it becomes quantized, this means that by creating certain electrical fields we can induce or terminate tunneling of electrons in quantum dots or otherwise. Such effect, that been called Coulomb blockade, has been used for managing extra low streams of electrons trough out single-electron nanotransistor. Single-electron transistor (SET) – is basic element of single-electron circuits. It has only one area of conduction, that connected with source and drain electrodes trough tunnel junctions. That area is called Coulomb Island that has electrostatic connection with one or two of gate electrodes. In blocked state there are no available energy levels inside tunnel area on source contact. All energy levels on island electrode with lesser energies are filled with electrons. Energy levels of island are decreasing when positive voltage being applied to gate electrode. Electron can be tunneled on island or into vacant energy level and from there to drain electrode, reaching level of Fermi on it. By periodically changing voltage on SET gate, because recurring Coulomb blockade effect, there is a probability of stepped current modulation, which is passing from source to drain. Furthermore, in single-electron devices that posses few areas with mutual capacitive link, it becomes possible for transition of certain single electrons trough those areas. As follows, it is possible to implement totally new logical circuits based on single-electron devices that designed to operate with individual electrons. II.  PROBLEM STATEMENT It is necessary to simulate voltage-current characteristics of SET. At the beginning, we should apply electronic model in form of equivalent electrical circuit of SET (Fig. 1b), which has been implemented into database of computer aided design program – Electronics Workbench. Based on schematic of single-electron transistor (Fig. 1a) , , , , , ,, , ,g s d g s d g s dU R C  in accordance, are potentials, tunnel (quantum) resistances and capacities of gate, source and drain. On equivalent circuit of SET (Fig. 1, b): gU  is the control voltage on gate, sdU  is the power supply voltage of source-drain, 1.6 aF,gd gsC C   3.2 aF,sdC   are capacity gate-drain, gate-source and source-drain accordingly; gR  is the resistance of gate, 1,2,3R  is the equivalent quantum resistances in-between source and drain, diodes 1 2,VD VD  and additional power sources 1E  = 20 mV and 2E = –20 mV are modeling effects of Coulomb blockade in normal and inverse modes. III. PROBLEM SOLUTION In nonlinear model of SET, resistance of 1 2 3, ,R R R  resistors that has a dependency from input voltage gU  on gate is considered to be approximated as following functions:  1 11 12 1cos ,ggTUR U R R kU                 (1)     23 12 31 2 23( ),( )gg ggR R UR U R VR U k R           (2) where 11 12 13, ,R R R  are resistance parameters of model configuration; 11600TkT TUq   is the O.S. Melnyk, Y.V. Poliakov, A.O. Kosov  Computer Simulation Of Characteristics Single-Electron Transistors       75  thermodynamic potential, that with temperature value of T = 297 K is equal to 25 mV; 1k  and 2k  are approximation coefficients (Fig. 2). Temperature-related parameters of tuning are changing by these laws: 11 11 0 2( ) ( ) exp( 0.09 ),TR T R T R T    12 2( ) exp( 0.09 ),TR T R T   23 23 0 3( ) ( ) ,TR T R T R T   where T is the temperature, parameters of approxi-mation have next values: 11 0( )R T = 11.8 GOhm; 23 0( )R T = 0.2 nOhm; 2TR = 3 GOhm and 3TR = 0.05 nOhm. A temperature dependency of resistant parameters has been represented on Fig. 3.                                                          a                                                         b Fig. 1. Model of single-electron transistor with following parameters: 3.2 aF,gsC   1.6 aF,ds gdC C   100 MOhmgR   (a), and equivalent electrical circuit for its model (b), CI is the Coulomb Island                                                          a                                                                      b Fig. 2. Dependence graphs of resistances R1 (a), R2 and R3 (b) from gate voltage Ug plot data has been calculated by using equations (1) and (2)                                                            a                                                                      b Fig. 3. Dependence of resistant tuning parameters R11, R12 (a) and R23 (b) from temperature:   is the R11;  is the R12 By using system of computer-aided design Electronics Workbench let’s simulate volt-ampere characteristics of SET, thus by fixating the voltage on gate and changing voltage of source-drain we will register values of source current (Fig. 4). 76                                                                     ISSN 1990-5548   Electronics and Control Sуstems  2017. N1(51): 74-77  Obviously that within values more than 10 mV on gate voltage, Coulomb blockade begins to disappear and with value of 25 mVgU   – completely vanishes. Let’s analyze behavior of volt-ampere characteristics with changing temperature and zero voltage on gate ( 0gU  ). As follows from Fig. 5, within temperature values greater than 30 K, Coulomb blockade begins to vanish, and with temperature value of T = 100 K is completely gone. Calculated volt-ampere characteristics models of SET are almost comparable with experimental data that been described in following research [1], [2].   Fig. 4. Simulation of volt-ampere characteristics of SET, build with different values of gate voltage 3.2 aF,gsC   1.6 aF,ds gdC C   100 MOhm, 30 KgR T  :  is the 0 mV;gU    is the 10 mV;gU    is the 20 mV;gU    is the 25 mVgU    Fig. 5. Volt-ampere characteristics of single-electron transistor, build with different temperature values:  is the T = 10 K;  is the T = 30 K;  is the T = 77 K;  is the T = 100 K;   is the T = 300 K IV. CONCLUSION By analyzing of the results simulation volt-ampere characteristics of single-electron transistor, which have been build with software Electronics Workbench in different terms, has been defined that volt-ampere characteristics of single-electron transistor are mostly dependent on two parameters – gate voltage and temperature: – within values of gate voltage that are greater than 10 mV, Coulomb blockade begins to decrease, and with 25 mVgU   completely vanishes, that concludes in straight volt-ampere characteristics; – with temperature values greater than 30 K, Coulomb blockade begins to decrease and towards temperature of T = 100 K – completely gone. REFERENCES [1] S. W. Hwang, KOSEC developed at Nanoelectronics Laboratory in Korea University. Seoul, Korea, 2008. 825 p. [2] Y. S. Yu, “Modeling of Single-Electron Transistors for Efficient Circuit and Design.” IEEE Trans. Electron. Devices. 1999, no. 7, pp. 1667–1682. Received January 21, 2017  Melnyk Oleksandr. Candidate of Sciences (Engineering). Associate Professor.  Electronics Department, Educational & Research Institute of Air Navigation, National Aviation University, Kyiv, Ukraine. Education: Kiev Polytechnic Institute, Kyiv, Ukraine (1971). Research area: Nanoelectronics, Computer aided designe of nanoelectronic circuits, Simulation of single-electron circuit. Publications: 176. E-mail: melnyk.ols@gmail.com Poliakov Yevhen. Student. Electronics Department, Educational & Research Institute of Air Navigation, National Aviation University, Kyiv, Ukraine. Education: National Aviation University, Kyiv, Ukraine. Research area: Modeling of single-electron circuits. Publications: 1. E-mail: ibex@ukr.net Kosov Anton. Student. Electronics Department, Educational & Research Institute of Air Navigation, National Aviation University, Kyiv, Ukraine. Education: National Aviation University, Kyiv, Ukraine. O.S. Melnyk, Y.V. Poliakov, A.O. Kosov  Computer Simulation Of Characteristics Single-Electron Transistors       77  Research area: Modeling of single-electron circuits. Publications: 1. E-mail: aaaasssssdddddd@i.ua  О. С. Мельник, Є. В. Поляков, А.О. Косов. Комп’ютерне моделювання характеристик одноелектронних транзисторів Розроблено методи моделювання електричних та температурних характеристик одноелектронного транзистора для інформаційного забезпечення системи автоматизованого схемотехнічного проектування Electronics Workbench. Проаналізовано залежність вольт-амперних характеристик наноприладу від впливу температури та робочого режиму. Ключові слова: одноелектронні транзистори; моделювання; вольт-амперні характеристики.  Мельник Олександр Степанович. Кандидат технічних наук. Доцент. Кафедра електроніки, Національний авіаційний університет, Київ, Україна.  Освіта: Київський політехнічний інститут, Київ, Україна (1971). Напрям наукової діяльності: наноелектроніка, автоматизовані системи проектування, моделювання одноелектронних схем. Кількість публікацій: 176. E-mail: melnyk.ols@gmail.com  Поляков Євген Володимирович. Студент. Кафедра електроніки, Національний авіаційний університет, Київ, Україна.  Освіта: Національний авіаційний університет, Київ, Україна. Напрям наукової діяльності: моделювання одноелектронних схем. Кількість публікацій: 1. E-mail: ibex@ukr.net  Косов Антон Олегович. Студент. Кафедра електроніки, Національний авіаційний університет, Київ, Україна  Освіта: Національний авіаційний університет, Київ, Україна. Напрям наукової діяльності: моделювання одноелектронних схем. Кількість публікацій: 1. E-mail: aaaasssssdddddd@i.ua  А. С. Мельник, Е. В. Поляков, А. О. Косов. Компьютерное моделирование характеристик одноэлектронных транзисторов Разработаны методы моделирования электрических и температурных характеристик одноэлектронного транзистора для информационного обеспечения системы автоматизированного схемотехнического проектирования Electronics Workbench. Проанализирована зависимость вольт-амперных характеристик наноприбора от влияния температуры и рабочего режима. Ключевые слова: одноэлектронные транзисторы; моделирование; вольт-амперные характеристики.  Мельник Александр Степанович. Кандидат технических наук. Доцент.  Кафедра электроники, Национальный авиационный университет, Киев, Украина. Образование: Киевский политехнический институт Киев, Украина (1971). Направление научной деятельности: наноэлектроника, автоматизированные системы проектирования, моделирование одноэлектронных схем. Количество публикаций: 176. E-mail: melnyk.ols@gmail.com  Поляков Евгений Владимирович. Студент. Кафедра электроники, Национальный авиационный университет, Киев, Украина. Образование: Национальный авиационный университет, Киев, Украина. Направление научной деятельности: моделирование одноэлектронных схем. Количество публикаций: 1. E-mail: ibex@ukr.net  Косов Антон Олегович. Студент. Кафедра электроники, Национальный авиационный университет, Киев, Украина. Образование: Национальный авиационный университет, Киев, Украина. Направление научной деятельности: моделирование одноэлектронных схем. Количество публикаций: 1. E-mail: aaaasssssdddddd@i.ua 

Комп’ютерне моделювання характеристик одноелектронних транзисторів

Abstract

Similar works

Full text

Available Versions

Наукові журнали Національного Авіаційного Університету

Crossref