We present a microscopic theoretical analysis of time and spatially resolved photoluminescence of naturally occurring quantum dots induced by monolayer fluctuations in the thickness of semiconductor quantum wells. In particular we
study the carrier dynamics and the emission properties of a semiconductor quantum dot under both continuous-wave and pulsed excitations resonant with the barrier energy levels. We show that collection-mode near-field optical microscopy allows the detection of light emission from excitonic dark states. We find that, at low temperature, the second (dark) energy level displays a carrier density significantly larger
than that of the lowest energy level. This behaviour is a consequence of carrier trapping due to the symmetry-induced suppression of radiative recombination
