We have used nuclear reaction analyses and Rutherford backscattering spectrometry to investigate quantitatively the compositional stability of hafnium aluminate thin films deposited on Sis001d by atomic layer deposition using HfCl4/H2O and AlsCH3d3/H2O precursors. It was found that increasing Al/Hf deposition cycles ratio leads to increasing oxygen deficiency in the as-deposited films as well as to increasing metal losses sup to ,15%d from the films after rapid thermal annealing at 1000 °C. Furthermore, isotopic substitution experiments, showed that incorporation of oxygen from the gas phase is eased in the cases where deposition conditions failed to supply enough oxygen to complete oxides stoichiometry
