Henttinen, Kimmo

Luusua, Ismo

Pekko, Panu

Vehmas, Tapani

A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes to provide a process quality monitoring. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP

Fabrication and characterization of IC compatible through-wafer polysilicon interconnects

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