Ahopelto, Jouni

Arpiainen, Sanna

Leskelä, M.

Niinistö, J.

Prunnila, Mika

Ritala, M.

Soikkeli, Miika

The selection and preparation of the dielectric is essential for graphene electronics and photonics. Industrial DRAM devices rely on ZrO2/Al2O3/ZrO2 (ZAZ)-structures as capacitor dielectrics with 2.5 nm/1 nm/2.5 nm thickness. Thin Al2O3 in between the ZrO2 films interrupts the grain boundary evolution through the film which minimizes both the leakage current and the surface roughness, but maintains the high effective dielectric constant. This would be favorable combination also in graphene devices. In addition, high-k dielectrics such as HfO2 and ZrO2 are superior in screening the charged impurities, although the low surface optical (SO) phonon energies significantly limit the mobility in graphene above cryogenic temperatures

Graphene on ZrO2 and Al2O3 gate dielectrics

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