Presented study is based on the need in 2D process and device simulations providing a good estimation of in-line process and electrical parameters for RIT vertical NPN bipolar junction transistors. These involve process and electrical modeling adjustments in order to reproduce vertical dopant profiles and show an appropriate electrical behavior of simulated BJTs Technology Modeling Associates (TMA) software has been implemented to facilitate this task. Theoretical and experimental verification efforts have been performed to examine the validity of the simulation results, and good agreement has been obtained
