Resistive Transition Metal Oxide Memory

Abstract

A process is created at the Rochester Institute of Technology Semiconductor & Microsystems Fabrication Laboratory (SMFL) to create crossbar structures. These structures can be created out of a variety of materials via different patterning methods, and can be used to investigate potential memristive behavior of many different materials. Using the crossbar structure, resistive switching of an Al/TiOx/Al structure is observed

    Similar works