Burdess JS

Cheung R

Harris AJ

Lee KK

Mehregany M

Phelps GJ

Pozzi M

Wright NG

Zorman CA

Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 \ub0C. The active material is a cubic poly SiC layer deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by Laser Doppler Velocimetry and used to derive the Young\u27s modulus and residual stress in the heteroepitaxial layer (330\ub145 GPa and 200\ub120MPa, respectively). The temperature coefficient of Young\u27s modulus is found to be -53\ub12 ppm/K in the range RT to ∼300 \ub0C, whilst an analytical expression is given for the temperature dependency of the Young\u27s modulus between RT and 500 \ub0C

Newcastle University E-Prints

Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

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