Hilton KP

Horsfall A

Hydes A

Johnson CM

Munday A

Nikitina I

Uren M

Vassilevski K

Wright N

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p(+)-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 m Omega.cm(2) measured at room temperature. These devices operated reversibly at a current density of 100 A/cm(2) whilst placed on a hot stage at temperature of 500 degrees C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 degrees C followed a power law (similar to T-2.4) which is close to the temperature dependence of electron mobility in 4H-SiC

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Silicon Carbide Vertical JFET Operating at High Temperature

Silicon Carbide Vertical JFET Operating at High Temperature

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