Briddon PR

Coomer BJ

Goss JP

Jones R

Oberg S

The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri-and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe

Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si

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