On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

Abstract

The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p lim = (5−6) × 1018 cm−3 and in pinning of the Fermi level at the limiting position F lim close to E V + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored