Lightly N\u3csub\u3e2\u3c/sub\u3eO nitrided dielectrics grown in a conventional furnace for E\u3csup\u3e2\u3c/sup\u3ePROM and 0.25 μm CMOS

Abstract

\u3cp\u3eFor deep-submicron CMOS transistors and FLOTOX E\u3csup\u3e2\u3c/sup\u3ePROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N\u3csub\u3e2\u3c/sub\u3eO nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.\u3c/p\u3