Conduction and trapping mechanisms in SiO\u3csub\u3e2\u3c/sub\u3e films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition

Abstract

\u3cp\u3eThe electric conduction and trapping mechanisms of silicon dioxide layers deposited using an electron cyclotron resonance plasma source were studied. It was found that the Fowler-Nordheim tunneling was the dominant conduction mechanism in the SiO\u3csub\u3e2\u3c/sub\u3e films obtained with low silane flow and at low pressure. The current at low biases was observed to be highly dependent on temperature for layers deposited with higher silane flows and higher pressures. It was confirmed using constant current stress measurements that low silane flow and low total pressure are suitable deposition conditions for obtaining a film comparable to thermally grown oxides.\u3c/p\u3