RF distortion characterisation of sub-micron CMOS

Abstract

\u3cp\u3eDistortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologies with minimum gatelengths down to 0.18 μm comply well with an accurate compact model. Using a new linearity figure of merit measurements are presented, which show that up to 1 GHz a high linearity at practical bias conditions is obtained because the distortion still predominantly originates from the nonlinear IV characteristics.\u3c/p\u3