Bonar JM

Cowern NEB

Dowsett MG

Morris RJH

Uppal S

Willoughby AFW

The diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800-900\ub0C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diffusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(\ub10.3)eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750 875\ub0C are in agreement with previous work. The activation energy of 3.2(\ub10.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion

Diffusion of ion-implanted Boron and Silicon in Germanium

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