Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates

Authors
Publication date
Publisher
'Elsevier BV'

Abstract

Abstract is not available.

    Similar works

    Full text

    thumbnail-image

    Available Versions

    Newcastle University E-Prints

    redirect
    oaioai:eprints.ncl.ac.uk:16385
    Last time updated on 30/05/2021