'Institute of Electrical and Electronics Engineers (IEEE)'
Doi
Abstract
High-performance electronics on flexible substrates along with low-cost fabrication by printing has gained interest recently. For this purpose, the printing of inorganic semiconductors based micro/nanostructures such as nanowires etc. are being explored. However, due to thermal budget, the controlled selective source/drain doping needed to obtain transistors from such structure remains a bottleneck post transfer printing. This paper presents an attractive solution to address this challenge. The solution is based on junctionless FETs (JLFET), which do not require selective doping. Unlike conventional JLFETs, which use nanowires, the devices presented here are based on nanoribbons as this enable larger channel width and hence high drive current. Studied through simulation, the JLFETs presented here show high-performance with current high enough to drive micro-LED. The TCAD simulation has been carried out to study the effect of single and dual metal gate (top and bottom side) of JLFETs as well as that of doping and nanoribbon thickness on the electrical characteristics. The simulation results indicate that the proposed devices will be suitable for high performance printable electronics applications
