Atuchin, Victor V.

Bereznaya, Svetlana A.

Brudnyi, V. N.

Korotchenko, Zoya V.

Kosobutsky, Alexey V.

Redkin, R. A.

Sarkisov, Sergey Yu.

English

Tomsk State University Repository

Научный совет по оптике и лазерной физике Российской академии наук Научный совет по люминесценции Российской академии наук Совет научной молодежи ИНЦ СО РАН Иркутский филиал Института лазерной физики СО РАН Институт геохимии СО РАН Иркутский государственный университет  Иркутский научный центр СО РАН           XV Международная молодежная конференция по  ЛЮМИНЕСЦЕНЦИИ И ЛАЗЕРНОЙ ФИЗИКЕ      Село Аршан, Республика Бурятия, Россия,  18–24 июля, 2016 г.      Тезисы лекций и докладов         Иркутск – 2016 г. «ЛЮМИНЕСЦЕНЦИЯ И ЛАЗЕРНАЯ ФИЗИКА» 6TERAHERTZ GENERATION FROM SURFACES OF ELECTRON AND NEUTRON IRRADIATED SEMICONDUCTORS  S. A. Bereznaya1, Z. V. Korotchenko1, R. A. Redkin1, S. Yu. Sarkisov1, V.N. Brudnyi2, A.V. Kosobutsky2,3, V.V. Atuchin1,4,5  1Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia 2Nanolectronics and Nanophotonics Laboratory, Tomsk State University, Tomsk 634050, Russia 3General Physics Department, Kemerovo State University, Kemerovo 650043, Russia 4Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia 5Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia   Terahertz generation from semiconductor surfaces is one of the most simple and efficient methods of obtaining terahertz radiation within 0.1-3.5 THz range for terahertz time-domain spectroscopy (THz-TDS). Terahertz pulse arises from ultrafast current transient produced by non-equilibrium charge carriers excited by femtosecond laser pulse and accelerated by surface built-in field or by diffusion process. This process is complex and depends on different funda-mental properties of semiconductor crystal. It is still difficult to extract the semiconductor properties from terahertz emission data. On the other hand, a qualitative characterization can be performed. In the present study, we test the terahertz emission from semiconductors (InAs, GaAs, GaSe, InP, InSb) with important parameters, like carrier lifetimes or mobilities, differing by orders of magnitude. We perform also simple modeling of the terahertz emission spectra. One of the ways to change these parameters is a high-energy particle irradia-tion. In this work, the electron- and neutron-irradiated III-V and III-VI semi-conductors are compared. Examples of terahertz spectra emitted from surface of electron irradiated GaSe are demonstrated on figures below. 

Terahertz generation from surfaces of electron and neutron irradiated semiconductors

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Terahertz generation from surfaces of electron and neutron irradiated semiconductors

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