Atuchin, Victor V.

Egorova, I. S.

Kalygina, Vera Mixajlovna

Prudaev, Ilya A.

Tolbanov, Oleg P.

English

Tomsk State University Repository

Научный совет по оптике и лазерной физике Российской академии наук Научный совет по люминесценции Российской академии наук Совет научной молодежи ИНЦ СО РАН Иркутский филиал Института лазерной физики СО РАН Институт геохимии СО РАН Иркутский государственный университет  Иркутский научный центр СО РАН           XV Международная молодежная конференция по  ЛЮМИНЕСЦЕНЦИИ И ЛАЗЕРНОЙ ФИЗИКЕ      Село Аршан, Республика Бурятия, Россия,  18–24 июля, 2016 г.      Тезисы лекций и докладов         Иркутск – 2016 г. «ЛЮМИНЕСЦЕНЦИЯ И ЛАЗЕРНАЯ ФИЗИКА» 7PHOTOELECTRICAL CHARACTERISTICS OF TiO2-n-Si HETEROSTRUCTURES  V.M. Kalygina1, I. S. Egorova1, I.A. Prudaev1, O. P. Tolbanov1,  V.V. Atuchin1,2,3  1Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia 2Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk630090, Russia 3Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia   The influence of thermal annealing on photoelectrical properties of TiO2-n-Si structures is studied. Titanium oxide film with thickness of 70 nm were pre-pared by magnetron sputtering on Si epitaxial layer with the donor concentra-tion of Nd = 7∙1014 cm-3. Before deposition of dielectric film the Si wafer was exposed to chemical cleaning. Then, the Si-substrate with dielectric film was separated into several parts. One part was not subjected to annealing, and the two parts were annealed in Ar atmosphere for 30 min at temperatures Ta = 500° and 750ºC. In the study of the photoelectric characteristics the structures were irradiated by LED at λ = 400 nm from the titanium oxide film side. Unlike pho-todiodes with Schottky barrier and metal-SiO2-n-Si structures the currents at positive potentials on the gate increase during exposure to radiation, starting with the low voltages. The currents at negative potentials at the gate show sig-nificantly greater sensitivity to light. In structures without annealing and after annealing at 500°C, there is a threshold voltage of reverse-current growth at the light exposure. The value of voltage depends on annealing temperature. A characteristic feature of reverse currents after switching off the light is the ap-pearance of residual currents. However, after one month the dark currents of the samples annealed at 500°C become 2 times lower in comparison to the dark current baseline values. This effect can be used for practical purposes as a method for leakage current reduction in MIS structures with dielectric TiO2 films. The curve for the dark current immediately after switching off the light is significantly higher than the initial one. This phenomenon is known as a frozen photoconductivity (persistent photoconductivity). 

Photoelectrical characteristics of TiO2-N-Si heterostructures

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Photoelectrical characteristics of TiO2-N-Si heterostructures

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