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TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices
Authors
Arnaud Curutchet
Frederic Darracq
+3 more
Nathalie Labat
Nathalie Malbert
Kalparupa Mukherjee
Publication date
25 September 2017
Publisher
HAL CCSD
Abstract
International audienc
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Archive Ouverte en Sciences de l'Information et de la Communication
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oai:HAL:hal-02462694v1
Last time updated on 26/02/2020
