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LOW-TEMPERATURE OHMIC CONTACT TO MONOLAYER MOS2 BY VAN DER WAALS BONDED CO/H-BN ELECTRODES
Authors
Baichang Li
Cory R. Dean
+15 more
Dongjea Seo
En-Min Shih
Heon-Jin Choi
James C. Hone
Ji-Hoon Park
Jun Yin
Kateryna Pistunova
Kenji Watanabe
Luis A. Jauregui
Philip Kim
Sang Hoon Chae
Takashi Taniguchi
Xu Cui
Young Duck Kim
Young Hee Lee
Publication date
1 August 2017
Publisher
AMER CHEMICAL SOC
Abstract
Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve lowerature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kÎ.μm at a carrier density of 5.3 × 1012/cm2. This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work. © 2017 American Chemical Societ
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Last time updated on 06/02/2020