Band structure and optical properties of SbSeI: Density-functional calculation

Abstract

The electronic structure and linear optical properties of the ferroelectric semiconductor SbSeI are calculated in the nonpolar phase using the density functional methods in the generalized gradient approximation. The obtained electronic band structure shows that SbSeI has an indirect forbidden gap of 1.65 eV. The linear photon-energy-dependent dielectric functions and some optical functions such as absorption and extinction coefficients, refractive index, energy-loss function, reflectivity and optical conductivity are calculated. Moreover, some important optical parameters such as the effective number of valence electrons and the effective optical dielectric constant are calculated. © 2007 Wiley-VCH Verlag GmbH & Co. KGaA