A charge model for four-terminal two-dimensional (2D)
semiconductor based field-effect transistors (FETs) is
proposed. The model is suitable for describing the
dynamic response of these devices under time-varying
terminal voltage excitations.This work has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No GrapheneCore2 785219, and from Ministerio de Economía y Competitividad under GrantsTEC2015-67462-C2-1-Rand TEC2017-89955-R(MINECO/FEDER)
