RF-distortion in deep-submicron CMOS technologies

Abstract

\u3cp\u3eThe distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18μm is verified and further scaling according to the ITRS-roadmap is predicted.\u3c/p\u3