Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects

Abstract

The progress on novel interconnects for carbon nanotube (CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors. The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects, as it requires electrochemical deposition followed by chemical-mechanical polishing. We report our experimental results on the failure current density, resistivity, electromigration effect and failure mechanism of patterned stripes of Pd, Sc and Y thin-films, regarding them as the potential novel interconnects. The Pd stripes have a failure current density of (8 similar to 10)x10(6) A/cm(2) (MA/cm(2)), and they are stable when the working current density is as much as 90% of the failure current density. However, they show a resistivity around 210 mu O.cm, which is 20 times of the bulk value and leaving room for improvement. Compared to Pd, the Sc stripes have a similar resistivity but smaller failure current density of 4 similar to 5 MA/cm(2). Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation. For comparison, Au stripes of the same dimensions show a failure current density of 30 MA/cm(2) and a resistivity around 4 mu O.cm, making them also a good material as novel interconnects.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000208414400008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Nanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedSCI(E)2ARTICLE3184-189