Obtaining quasi-static models using a frequency domain extraction methodology

Abstract

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”This contribution illustrates how a realistic nonlinear quasi-static model for FET-type devices can be extracted using an original frequency domain extraction technique. An ideal ‘made-up’ device is built from the measured bias dependence of a GaN medium power device. This ideal device is excited by two ideal voltage sources and its response (drain current) is used to illustrate how the extraction procedure can separate conduction and displacement current components provided the total current spectrum (or, alternatively, waveform) and control voltages are known.This work has been supported by the Junta de Andalucía under Grant (TIC2012-1237). Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech