Journal ArticleHeterostructures and quantum wells can be produced in GaInP without changing the solid composition by simply varying the order parameter. Since CuPt ordering reduces the band-gap energy, changes in the order parameter induced by changes in growth conditions result in heterostructures with band-gap energy discontinuities as large as 160 meV. The most convenient growth parameter to change is the flow rate of the P precursor. However, previous work has shown that under some conditions the change in order parameter is sluggish, giving rise to graded heterostructures. The cause of the slow change in order parameter is the topic of this article. CuPt ordering has been shown to be driven by the formation of _x0004_1 ¯ 10_x0005_ P dimers, characteristic of the (2_x0002_4) surface reconstruction. Thus, this study of the transient in the degree of order induced by changing the flow rate of the P precursor has relied on the use of surface photoabsorption _x0002_SPA_x0003_ to monitor the surface reconstruction during the period after the partial pressure of the P precursor was reduced. The SPA transient has then been correlated with the abruptness of the heterostructure interface, determined from the transmission electron microscopy images and the photoluminescence spectra, for organometallic vapor phase epitaxial _x0002_OMVPE_x0003_ growth at temperatures of 620 and 670 °C using the P precursors phosphine (PH3) and tertiarybutylphosphine _x0002_TBP_x0003_. For TBP at both 620 and 670 °C, the SPA reflectance transient is extremely short, with a time constant of less than 10 s, corresponding to the time response of the OMVPE growth system. Abrupt interfaces are produced using these conditions. For PH3, the SPA reflectance transient is abrupt at 670 °C; however, at 620 °C the SPA response is extremely sluggish, with a time constant of approximately 6.5 min. The effect is tentatively attributed to a surfactant effect due to H on the surface. Corresponding heterostructures were abrupt at 670 °C and graded at 620 °C
