Journal ArticleThe use of surfactants during the vapor phase growth of III-V materials to control fundamental characteristics of epitaxial layers is becoming increasingly important. We have investigated the remarkable effects of Sb, from triethylantimony (TESb) Pyrolysis, on the Zn doping during the organometallic vapor phase epitaxial growth (OMVPE) of GaP. Antimony is isoelectric with the P host; therefore it is not a dopant in this material. It is also much larger than P so little incorporation occurs
