Quantum states and linear response in dc and electromagnetic fields for
charge current and spin polarization of electrons at Bi/Si interface with
giant spin-orbit coupling
An expansion of the nearly free-electron model constructed by Frantzeskakis,
Pons and Grioni [Phys. Rev. B {\bf 82}, 085440 (2010)] describing quantum
states at Bi/Si(111) interface with giant spin-orbit coupling is developed and
applied for the band structure and spin polarization calculation, as well as
for the linear response analysis for charge current and induced spin caused by
dc field and by electromagnetic radiation. It is found that the large
spin-orbit coupling in this system may allow resolving the spin-dependent
properties even at room temperature and at realistic collision rate. The
geometry of the atomic lattice combined with spin-orbit coupling leads to an
anisotropic response both for current and spin components related to the
orientation of the external field. The in-plane dc electric field produces only
the in-plane components of spin in the sample while both the in-plane and
out-of-plane spin components can be excited by normally propagating
electromagnetic wave with different polarizations.Comment: 10 pages, 9 figure
