We present a theoretical model for the dynamics of an electron that gets
trapped by means of decoherence and quantum interference in the central quantum
dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and
300 K. The electron's dynamics is described by a master equation with a
Hamiltonian based on the tight-binding model, taking into account electron-LO
phonon interaction (ELOPI). Based on this configuration, the probability to
trap an electron with no decoherence is almost 27%. In contrast, the
probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K
and 58% at 300 K. Our model provides a novel method of trapping an electron at
room temperature.Comment: Revtex 4, 11 pages, 13 figure
