As a viable candidate for an all-carbon post-CMOS electronics revolution,
epitaxial graphene has attracted significant attention. To realize its
application potential, reliable methods for fabricating large-area
single-crystalline graphene domains are required. A new way to synthesize high
quality epitaxial graphene, namely "face-to-face" method, has been reported in
this paper. The structure and morphologies of the samples are characterized by
low-energy electron diffraction, atomic force microscopy, angle-resolved
photoemission spectroscopy and Raman spectroscopy. The grown samples show
better quality and larger length scales than samples grown through conventional
thermal desorption. Moreover the graphene thickness can be easily controlled by
changing annealing temperature.Comment: 16 pages and 7 figure