In this work we study the behavior of the optical phonon modes in bilayer
graphene devices by applying top gate voltage, using Raman scattering. We
observe the splitting of the Raman G band as we tune the Fermi level of the
sample, which is explained in terms of mixing of the Raman (Eg) and infrared
(Eu) phonon modes, due to different doping in the two layers. We theoretically
analyze our data in terms of the bilayer graphene phonon self-energy which
includes non-homogeneous charge carrier doping between the graphene layers. We
show that the comparison between the experiment and theoretical model not only
gives information about the total charge concentration in the bilayer graphene
device, but also allows to separately quantify the amount of unintentional
charge coming from the top and the bottom of the system, and therefore to
characterize the interaction of bilayer graphene with its surrounding
environment
