We theoretically compute the thermal conductivity of SiGe alloy nanowires as
a function of nanowire diameter, alloy concentration, and temperature,
obtaining a satisfactory quantitative agreement with experimental results. Our
results account for the weaker diameter dependence of the thermal conductivity
recently observed in Si1−xGex nanowires (x<0.1), as compared to pure
Si nanowires. We also present calculations in the full range of alloy
concentrations, 0≤x≤1, which may serve as a basis for comparison
with future experiments on high alloy concentration nanowires.Comment: 3 fig